AUIRF9Z34N (P-CHANNEL)
AUIRF9Z34N, Power MOSFET, 55V, 19A, (TO-220)
Features:
Advanced Planar Technology
P-Channel MOSFET
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description:
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
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- Package: TO-220
- Drain-to-Source Breakdown Voltage: -100 V
- Gate-to-Source Breakdown Voltage: +/- 20 V
- Continuous Drain Current: -23 A
- Minimum Operating Temperature: -55°C
- Maximum Operating Temperature: 175°C
- Pin Spacing Pitch: 2.54mm (0.1in)
- Hole Diameter: 3.8mm (0.15in)
- Weight: 2g (0.07oz)
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