Description:
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation 25 °C Storage temperature Max. operating junction temperature Value to 150 Unit °C
Parameter Thermal resistance junction-case ____max Value 1.25 Unit °C/W
Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Test conditions VCB 200 V VEB 5 A VCE 5 V VCE 4 V VCE = 12 MHz pF Min. Typ. Max. 0.1 Unit µA
Collector-emitter 50 mA breakdown voltage (IB 0) C Collector-base breakdown 100 µA voltage (IE = 0) Emitter-base breakdown voltage (IC = 0) Collector-emitter saturation voltage Base-emitter voltage DC current gain Transition frequency Collector-base capacitance (IE = 0) Resistive Load 7 A VCE 0.5 A VCB 10 V
| Specifications | |
| Transistor Type | NPN |
| Voltage – Collector Emitter Breakdown (Max) | 140V |
| Current – Collector (Ic) (Max) | 12A |
| Power – Max | 100W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 1A, 5V |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 700mA, 7A |
| Frequency – Transition | 20MHz |
| Current – Collector Cutoff (Max) | – |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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