N-Channel MOSFET- FQP30N06L

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

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Description

Specifications

Attribute Value
Channel Type N
Maximum Continuous Drain Current 32 A
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 45 mΩ
Minimum Gate Threshold Voltage 1V
Maximum Gate Source Voltage -20 V, +20 V
Package Type TO-220
Mounting Type Through Hole
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 79 W
Typical Input Capacitance @ Vds 800 pF@ 25 V
Typical Turn-Off Delay Time 60 ns
Minimum Operating Temperature -55 °C
Width 4.7mm
Typical Gate Charge @ Vgs 15 nC @ 5 V
Height 16.3mm
Series QFET
Maximum Operating Temperature +175 °C
Length 10.67mm
Dimensions 10.67 x 4.7 x 16.3mm
Transistor Material Si
Typical Turn-On Delay Time 15 ns
Number of Elements per Chip 1
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