IRF4905 (P-CHANNEL)

Features

• Drain-Source Volt (Vds): -55V
• Gate-Source Volt (Vgs): 20V
• Drain Current (Id): -74A
• Power Dissipation (Ptot): 200W
• Type: P-Channel

Product Characteristics: 

• Family: IRF4905
• Category: Power MOSFET
• Configuration: Single
• Maximum Power Dissipation: 200000mW
• Number of Elements per Chip: 1
• Channel Mode: Enhancement
• Channel Type: P
• Maximum Continuous Drain Current: 74A
• Maximum Drain Source Resistance: 0.02Ohm@10V
• Maximum Drain Source Voltage: 55V
• Maximum Gate Source Voltage: ±20V
• Typical Fall Time: 96ns
• Typical Gate Charge @ Vgs: 180nC(Max)@10V
• Typical Input Capacitance @ Vds: 3400pF@25V
• Typical Rise Time: 99ns
• Typical Turn-Off Delay Time: 61ns
• Typical Turn-On Delay Time: 18ns
• Minimum Operating Temperature: -55°C
• Maximum Operating Temperature: 175°C
• Mounting: Through Hole
• Pin_Count: 3
• Supplier Package: TO-220AB
• Product Width: 4.82mm(Max)
• Product Height: 9.02mm(Max)
• Product Length: 10.66mm(Max)
• Product Type: MOSFET